advanced power n-channel enhancement mode electronics corp. power mos fet low gate charge bv dss 30v simple drive requirement r ds(on) 21m fast switching i d 36a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 2.5 /w rthj-a thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice. 200227032 AP40N03GH/j pb free plating product parameter rating drain-source voltage 30 gate-source voltage continuous drain current, v gs @ 10v 36 continuous drain current, v gs @ 10v 25 pulsed drain current 1 150 total power dissipation 50 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.4 thermal data parameter storage temperature range the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap40n03gj) are available for low-profile applications. g d s to-251(j) g d s to-252(h) 20 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v bv dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance v gs =10v, i d =18a - 18 21 m v gs =4.5v, i d =14a - 24 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 26 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =18a - 17 - nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =5v - 10 - nc t d(on) turn-on delay time 2 v ds =15v - 7.2 - ns t r rise time i d =18a - 60 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22.5 - ns t f fall time r d =0.83 -10- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =25v - 380 - pf c rss reverse transfer capacitance f=1.0mhz - 133 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 36 a i sm pulsed source current ( body diode ) 1 - - 150 a v sd forward on voltage 2 t j =25 , i s =36a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. AP40N03GH/j 100 20v
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junctiontemperature AP40N03GH/j 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =18a 17 19 21 23 25 27 29 31 3456789101112 v gs (v) r ds(on) (m ) i d =18a t c =25 o c 0 10 20 30 40 50 60 70 80 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v v g =4.0v v g =5.0v v g =6.0v v g =10v v g =7.0v 0 10 20 30 40 50 60 70 80 90 100 01234567 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =3.0v v g =4.0v v g =5.0v v g =6.0v v g =10v v g =7.0v
AP40N03GH/j fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance 0 10 20 30 40 50 60 0 50 100 150 t c ,case temperature ( o c) p d (w) 1 10 100 1000 1 10 100 v ds (v) i d (a) t c =25 o c single pulse 10us 100us 1ms 10ms 100ms 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature AP40N03GH/j 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =24v v ds =20v v ds =16v i d =20a 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j = 25 o c t j = 150 o c 100 1000 10000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss
AP40N03GH/j fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.5x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d 0.8 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a
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